
Fractional Kinetics In Solids: Anomalous Charge Transport In Semiconductors, Dielectrics And Nanosystems
av
Vladimir V Uchaikin
,
Renat T Sibatov
Inga betyg ännu
Romance
Science & Technology
Format
Kindle
Sidor
27,600
Språk
Kinesiska
Publicerad
Jan 1, 2012
Förlag
World Scientific
Utgåva
3
ISBN-10
9814449601
ISBN-13
9789814449601
Beskrivning
The work delves into the complexities of charge transport in various solid materials, throwing light on the inadequacies of traditional models like the Boltzmann equation in explaining certain non-equilibrium phenomena. The authors examine the peculiar behaviors observed in semiconductors, dielectrics, and nanosystems, providing insights into their fractional kinetics. This approach enables a deeper understanding of the anomalies presented in these materials, presenting an alternative framework for researchers and professionals in the field.
Uchaikin and Sibatov intricately explore the implications of fractional kinetics, offering a refreshing perspective on how these models can be applied to real-world scenarios. By addressing the limitations of the Markovian transport model, they pave the way for more nuanced interpretations of charge dynamics. The text is rich with theoretical discussions and practical examples, making it a valuable resource for those pushing the boundaries of materials science and engineering.
Through a comprehensive examination of charge transport processes, the authors contribute significantly to the understanding of material behavior under various conditions, encouraging further exploration and innovation in semiconductor technology, dielectric applications, and nanotechnology advancements. Their findings stand as an essential guide for researchers aiming to unravel the intricate mechanisms governing charge transport in solids.
Uchaikin and Sibatov intricately explore the implications of fractional kinetics, offering a refreshing perspective on how these models can be applied to real-world scenarios. By addressing the limitations of the Markovian transport model, they pave the way for more nuanced interpretations of charge dynamics. The text is rich with theoretical discussions and practical examples, making it a valuable resource for those pushing the boundaries of materials science and engineering.
Through a comprehensive examination of charge transport processes, the authors contribute significantly to the understanding of material behavior under various conditions, encouraging further exploration and innovation in semiconductor technology, dielectric applications, and nanotechnology advancements. Their findings stand as an essential guide for researchers aiming to unravel the intricate mechanisms governing charge transport in solids.
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